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Wednesday, October 7, 2020 | History

4 edition of 1997 IEEE International Integrated Reliability Workshop final report found in the catalog.

1997 IEEE International Integrated Reliability Workshop final report

Stanford Sierra Camp, Lake Tahoe, California, October 13-16, 1997

by International Integrated Reliability Workshop (1997 Lake Tahoe, California)

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  • 22 Currently reading

Published by IEEE Electron Devices Society, IEEE Reliability Society in Piscataway, New Jersey .
Written in English

    Subjects:
  • Integrated circuits -- Reliability -- Congresses.,
  • Integrated circuits -- Wafer-scale integration -- Reliability -- Congresses.

  • Edition Notes

    Statementsponsored by the IEEE Electron Devices Society and the IEEE Reliability Society
    ContributionsIEEE Electron Devices Society., IEEE Reliability Society.
    Classifications
    LC ClassificationsTK7874 .I5944 1997
    The Physical Object
    Paginationv, 161 p. :
    Number of Pages161
    ID Numbers
    Open LibraryOL712376M
    ISBN 100780342054, 0780342062
    LC Control Number97080028
    OCLC/WorldCa38865152

    Author of Conference proceedings, DIPED, Proceedings of the 7th International Symposium on the Physical & Failure Analysis of Integrated Circuits [IPFA '99, GaAs IC Symposium, ASMC , International Symposium on Power Semiconductor Devices and ICs (Ispsd) Proceedings, Intenational Electron Devices Meeting (Iedm) Proceedings, IEEE International Integrated Reliability Workshop. @article{DuminCorrelationOC, title={Correlation of charge-to-breakdown obtained from constant current stresses and ramped current stresses, and the implications for ultra-thin gate oxides}, author={Nels A. Dumin}, journal={ IEEE International Integrated Reliability Workshop Final Report .

      Get this from a library! International Integrated Reliability Workshop final report: Stanford Sierra Camp, Lake Tahoe, California, October , [IEEE Electron Devices Society.; IEEE Reliability Society.;]. IEEE International Integrated Reliability Workshop Final Report > - Abstract With the perspective of detecting, minimising or eliminating reliability fails of products due to processing problems after process qualification it becomes evident to establish fWLR Monitoring on product wafers.

    T3 - IEEE International Integrated Reliability Workshop Final Report. SP - EP - BT - IEEE International Integrated Reliability Workshop Final Report, IIRW PB - Institute of Electrical and Electronics Engineers Inc. T2 - IEEE International Integrated Reliability Workshop Final Report, IIRW Author of Conference proceedings, Sixth International Workshop on Quality of Service (IWQoS '98), Power electronics in transportation, PESC98, Twenty second IEEE/CPMT International Electronics Manufacturing Technology Symposium, Fourth International High Temperature Electronics Conference, EMPD '98, AMC 'Coimbra.


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1997 IEEE International Integrated Reliability Workshop final report by International Integrated Reliability Workshop (1997 Lake Tahoe, California) Download PDF EPUB FB2

Get this from a library. IEEE International Integrated Reliability Workshop final report: Stanford Sierra Camp, Lake Tahoe, California, October[IEEE Electron Devices Society.; IEEE Reliability Society.;]. Integrated Reliability Workshop Final Report, IEEE International ; Integrated Reliability Workshop Final Report, IEEE International ; Integrated Reliability Workshop Final Report, IEEE International ; Integrated Reliability Workshop Final Report, IEEE International ; Integrated Reliability Workshop Final Report, IEEE.

The IEEE International Integrated Reliability Workshop (IIRW) originated from the Wafer Level Reliability Workshop in The IIRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

The IEEE International Integrated Reliability Workshop (IRW) originated from the Wafer Level Reliability Workshop in The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

IEEE Xplore, delivering full text Published in: IEEE International Integrated Reliability Workshop Final Report (Cat. NoTH) Article #: Date of Conference: Oct. Date Added to IEEE Xplore: 06 August ISBN Information: Print ISBN: INSPEC.

|a International Integrated Reliability Workshop final report |h [electronic resource]: |b Stanford Sierra Camp, Lake Tahoe, California, October/ |c sponsored by the IEEE Electron Devices Society and the IEEE Reliability Society.

3 |a Final report, International Integrated Reliability Workshop IEEE International Integrated Reliability Workshop Final Report (Cat. 99TH) Location: Lake Tahoe, CA, USA; IEEE International Integrated Reliability Workshop Final Report (Cat. NoTH) Location: Lake Tahoe, CA, USA; IEEE International Integrated Reliability Workshop Final Report (Cat.

IEEE International integrated reliability workshop final report Details; Contributors; Bibliography; Quotations; Similar; Collections; Source.

IEEE International Integrated Reliability Workshop Final Report > c1. Identifiers. book ISSN: book ISBN: book e-ISBN: Abstract: Summary form only given.

Charge-to-breakdown (Q/sub BD/) is one of the parameters that is used as a measure of gate oxide quality. It has been shown that, under the correct measurement conditions, there is good agreement between the Q/sub BD/ that is measured with an exponential current ramp (ECR) and the Q/sub BD/ that is measured with a constant current stress (CCS), and that Q/sub.

IEEE International integrated reliability workshop Details; Contributors; Bibliography; Quotations; Similar; Collections; Source.

IEEE International Integrated Reliability Workshop Final Report > ii. Identifiers. book ISSN: book ISBN: book e-ISBN: DOI /IRWS IEEE International Integrated Reliability Workshop Final Report, This article consists of a collection of slides from the author's conference presentation.

Some of the specific areas/topics discussed include: Scaling (Density & Materials); Si Devices (Planar Devices: Classical, Fully depleted), (Non planar Devices: Non-Si Devices: Ge.

Print version: International Integrated Reliability Workshop. IEEE International Integrated Reliability Workshop final report Genre/form: Electronic journals. LCCN: ISSN: Stock number: IEEE, Hoes Lane, Piscataway, NJ The IEEE International Conference on Systems, Man, and Cybernetics (SMC ) will be held in Metro Toronto Convention Centre (MTCC), Toronto, Ontario, Canada.

SMC is the flagship conference of the IEEE Systems, Man, and Cybernetics Society. IEEE International Integrated Reliability Workshop Final Report, None. Johnston, and J.B.

Bernstein, "Latent Reliability Degradation of Ultra-Thin Oxides After Heavy-Ion Irradiation and Gamma-Ray Irradiation," IEEE Integrated Reliability Workshop (IRW) Final Report, IEEE #01TH, p.

(). Author of IEEE/RSJ International Conference on Intelligent Robots and Systems, IEEE International Integrated Reliability Workshop final report by International Integrated Reliability Workshop ( Lake Tahoe, First published in 3 editions. Not in Library. IEEE membership offers access to technical innovation, cutting-edge information, networking opportunities, and exclusive member benefits.

Members support IEEE's mission to advance technology for humanity and the profession, while memberships build a platform to introduce careers in technology to students around the world.

Best Student Paper: W.-C. Lee, A. Wang, T.-J. King and C. Hu, “Impact of poly-Si Ge gate technology on device performance and reliability,” Proceedings of the International Semiconductor Device Research Symposium, pp.IEEE International Integrated Reliability Workshop Final Report, In this paper a new technique for predicting gate oxide reliability with high confidence from easily accessible ramped voltage stress data is proposed.

“Negative bias instability in 4H-SiC MOSFETS: evidence for structural changes in the SiC”, Anders, M.A.(1); Lenahan, P.M.(1); Lelis, A.J.(2),(1) Dept.

of Eng. Sci. IEEE International Integrated Reliability Workshop Final Report is published by. It's publishing house is located in United States. Coverage history of this conference and proceedings is as following: The organization or individual who handles the printing and distribution of printed or digital publications is known as Publisher.

International Integrated Reliability Workshop ( Lake Tahoe, Calif.). International Integrated Reliability Workshop final report.

[New York]: IEEE Electron Devices Society: IEEE Reliability Society, © (DLC) (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type.Download or Read online Reliability Prediction From Burn In Data Fit To Reliability Models full HQ books. Available in PDF, ePub and Kindle.

We cannot guarantee that Reliability Prediction From Burn In Data Fit To Reliability Models book is available. Click Get Book button to download or read books, you can choose FREE Trial service.International Integrated Reliability Workshop ( Lake Tahoe, Calif.).

International Integrated Reliability Workshop final report. [New York]: IEEE Electron Devices Society: IEEE Reliability Society, [] (DLC) (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type.